Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures
Identifieur interne : 017E76 ( Main/Repository ); précédent : 017E75; suivant : 017E77Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures
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Abstract
We report measurements of the temperature and intensity dependence of photoluminescence from self-organized InAs quantum dots grown by molecular-beam epitaxy on GaAs(100). At low temperatures we observed a reduction in the emission linewidth with increasing temperature that is followed by an increase in the linewidth at higher temperatures. We have also found that the photoluminescence spectra from our samples undergo an asymmetric temperature-dependent blueshift with increasing pump intensity. The dependence of the photoluminescence spectra on the temperature and degree of excitation are explained in terms of a competition between a saturable confined-electron to confined-hole transition and an excited-state transition involving the ground confined-electron state and the two-dimensional hole continuum associated with the wetting layer. At high excitation levels the photoluminescence spectra appear to be dominated by the wetting layer transition.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures</title><author><name sortKey="Lee, Hao" uniqKey="Lee H">Hao Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science Institute, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics and Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Yang, Weidong" uniqKey="Yang W">Weidong Yang</name></author><author><name sortKey="Sercel, Peter C" uniqKey="Sercel P">Peter C. Sercel</name></author></titleStmt><publicationStmt><idno type="inist">97-0563688</idno><date when="1997-04-15">1997-04-15</date><idno type="stanalyst">PASCAL 97-0563688 AIP</idno><idno type="RBID">Pascal:97-0563688</idno><idno type="wicri:Area/Main/Corpus">018490</idno><idno type="wicri:Area/Main/Repository">017E76</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenic compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor quantum dots</term><term>Spectral shift</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320D</term><term>7855C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Arsenic composé</term><term>Point quantique semiconducteur</term><term>Photoluminescence</term><term>Déplacement spectral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report measurements of the temperature and intensity dependence of photoluminescence from self-organized InAs quantum dots grown by molecular-beam epitaxy on GaAs(100). At low temperatures we observed a reduction in the emission linewidth with increasing temperature that is followed by an increase in the linewidth at higher temperatures. We have also found that the photoluminescence spectra from our samples undergo an asymmetric temperature-dependent blueshift with increasing pump intensity. The dependence of the photoluminescence spectra on the temperature and degree of excitation are explained in terms of a competition between a saturable confined-electron to confined-hole transition and an excited-state transition involving the ground confined-electron state and the two-dimensional hole continuum associated with the wetting layer. At high excitation levels the photoluminescence spectra appear to be dominated by the wetting layer transition.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>55</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures</s1></fA08><fA11 i1="01" i2="1"><s1>LEE (Hao)</s1></fA11><fA11 i1="02" i2="1"><s1>YANG (Weidong)</s1></fA11><fA11 i1="03" i2="1"><s1>SERCEL (Peter C.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Materials Science Institute, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></fA14><fA20><s1>9757-9762</s1></fA20><fA21><s1>1997-04-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0563688</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report measurements of the temperature and intensity dependence of photoluminescence from self-organized InAs quantum dots grown by molecular-beam epitaxy on GaAs(100). At low temperatures we observed a reduction in the emission linewidth with increasing temperature that is followed by an increase in the linewidth at higher temperatures. We have also found that the photoluminescence spectra from our samples undergo an asymmetric temperature-dependent blueshift with increasing pump intensity. The dependence of the photoluminescence spectra on the temperature and degree of excitation are explained in terms of a competition between a saturable confined-electron to confined-hole transition and an excited-state transition involving the ground confined-electron state and the two-dimensional hole continuum associated with the wetting layer. 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